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Interferometric method for quantitatively testing the RadOptic effect in bulk semiconductors.

Bo-Dong Peng1, Yan Song1, Dong-Wei Hei1

  • 1State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China.

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Summary
This summary is machine-generated.

This study introduces a novel interferometric method to measure real-time excess carrier density and refractive index changes in semiconductors exposed to MeV photons. The findings aid in developing radiation-optic systems by detailing carrier dynamics in materials like GaAs and ZnO.

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Area of Science:

  • Materials Science
  • Optics
  • Semiconductor Physics

Background:

  • MeV photon irradiation induces changes in semiconductor refractive indices, crucial for radiation-optic (RadOptic) systems.
  • Understanding excess carrier dynamics (generation and recombination) is key to quantifying these refractive index modulations.
  • Existing methods may lack the real-time resolution needed for pulsed radiation environments.

Purpose of the Study:

  • To develop and implement an interferometric technique for quantitative investigation of MeV-photon-induced refractive index changes in bulk semiconductors.
  • To establish a model describing excess carrier density evolution, including generation and recombination kinetics.
  • To analyze carrier dynamics and recombination behavior in intrinsic Gallium Arsenide (GaAs) and Zinc Oxide (ZnO) under pulsed gamma radiation.

Main Methods:

  • Developed a model for excess carrier density evolution, determining key parameters (summed injection intensity, gamma intensity curve) via dose and pulse measurements.
  • Implemented an interferometric method using a single-mode fiber probe beam to create double-beam interference for real-time refractive index and excess carrier density measurements.
  • Tested the method on intrinsic GaAs and intrinsic ZnO bulk samples in a slab geometry.

Main Results:

  • Successfully measured instantaneous refractive index changes and real-time excess carrier densities in bulk semiconductors.
  • Determined a recombination time constant of approximately 0.6 ns for intrinsic GaAs, largely independent of photon energy.
  • Observed two distinct recombination components in ZnO: a short component under intense, short pulses and a long component under weaker, long pulses.

Conclusions:

  • The developed interferometric method provides a viable approach for studying excess carrier dynamics induced by pulsed gamma radiation.
  • The findings offer insights into refractive index modulation mechanisms under pulsed gamma conditions.
  • This research is expected to contribute to the development of RadOptic systems utilizing bulk semiconductor materials.