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Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet.

Zhiyuan Fan1,2, Zhaoxin Geng3, Xiaoqin Lv1,2

  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 10083, China.

Scientific Reports
|November 3, 2017
PubMed
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A novel terahertz (THz) modulator using tungsten disulfide and silicon achieves 99% modulation depth. This device offers a new direction for advanced THz communication systems.

Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Terahertz (THz) modulators are crucial for next-generation wireless communication.
  • Existing THz modulators face limitations in modulation depth and range.
  • Developing advanced THz modulators is essential for enhancing communication systems.

Purpose of the Study:

  • To demonstrate a novel THz modulator utilizing annealed tungsten disulfide (WS2) and high-resistivity silicon.
  • To investigate the laser power-dependent modulation characteristics of the proposed device.
  • To explore the potential of WS2-based heterojunctions for improved THz modulation.

Main Methods:

  • Fabrication of a p-n heterojunction using p-type WS2 and n-type high-resistivity silicon.

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  • Characterization of the THz modulator's performance under laser pumping.
  • Analysis of the modulation mechanism based on carrier separation and conductivity modulation.

    • Main Results:

    • The demonstrated THz modulator exhibits a laser power-dependent modulation effect.
    • A maximum modulation depth of 99% was achieved for frequencies ranging from 0.25 to 2 THz at a pumping laser power of 2.59 W/cm².
    • The p-n heterojunction effectively separates and limits carriers, modulating THz wave transmission.

    Conclusions:

    • The WS2/silicon heterojunction THz modulator offers significantly improved performance.
    • The wide band gap of WS2 facilitates carrier separation, leading to high modulation depths.
    • This work presents a new material and structural approach for developing high-performance THz modulators.