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Updated: Feb 19, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Chromium carbide/Carbon Nanotube Hybrid Structure Assisted Copper Composites with Low Temperature Coefficient of
Seungchan Cho1, Keiko Kikuchi2, Eunkyung Lee3
1Composites Research Division, Korea Institute of Materials Science (KIMS), Changwon, 51508, South Korea. sccho@kims.re.kr.
Abstract:
In order to explore the possibility of using carbon nanotube (CNT) to introduce and control the temperature coefficient of resistance (TCR) of metal matrix composite, relatively thick and short multi-walled CNTs (MWCNTs) were introduced in the metal matrix with in-situ formation of chromium carbide (Cr7C3) at the CNT/copper (Cu) interface. We demonstrate that incompatible properties such as electrical conductivity and TCR can be achieved simultaneously by introducing MWCNTs in the Cu matrix, with control of the interfacial resistivity using the MWCNT/Cr7C3-Cu system. High electrical conductivity of 94.66 IACS and low TCR of 1,451 10-6 °C-1 are achieved in the 5 vol.% MWCNT-CuCr composite. In-situ formation of Cr7C3 nanostructures at the MWCNT/Cu interface by reaction of diffused Cr atoms and amorphous carbon of MWCNTs would assist in improving the electrical properties of the MWCNT-CuCr composites.
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