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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Types of Semiconductors01:20

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities.

Stephen W Howell1, Isaac Ruiz2, Paul S Davids2

  • 1Sandia National Laboratories, Albuquerque, NM, 87123, USA. swhowel@sandia.gov.

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|November 9, 2017
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Summary
This summary is machine-generated.

A novel optical detector uses a deeply depleted graphene-insulator-semiconducting (D²GIS) junction for sensitive light detection. This technology integrates charge collection and amplification for advanced imaging applications.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Semiconductor Physics

Background:

  • Traditional optical detectors face limitations in sensitivity and readout capabilities.
  • Graphene field-effect transistors (GFETs) offer unique electronic properties for signal amplification.
  • Deep depletion techniques in semiconductors can enhance charge collection efficiency.

Purpose of the Study:

  • To develop a sensitive optical detector by combining graphene with a deeply depleted semiconductor junction.
  • To achieve simultaneous charge integration and localized amplification within a single device.
  • To explore the potential of this new architecture for broadband imaging.

Main Methods:

  • Fabrication of a deeply depleted graphene-insulator-semiconducting (D²GIS) junction.
  • Utilizing photogating of a GFET by carriers generated in a depleted silicon substrate.
  • Characterization of responsivity and dynamic range for visible wavelengths.

Main Results:

  • Achieved high responsivities up to 2,500 A/W (25,000 S/W).
  • Demonstrated a dynamic range of 30 dB.
  • Confirmed simultaneous photo-induced charge integration and continuous on-detector readout.

Conclusions:

  • The D²GIS detector architecture enables sensitive optical detection with integrated amplification.
  • The device principle is transferable to various semiconductor absorbers for broad spectral imaging.
  • This technology presents a high-performance paradigm for advanced optical imaging systems.