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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Ionic Crystal Structures02:42

Ionic Crystal Structures

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Ionic crystals consist of two or more different kinds of ions that usually have different sizes. The packing of these ions into a crystal structure is more complex than the packing of metal atoms that are the same size.
Most monatomic ions behave as charged spheres, and their attraction for ions of opposite charge is the same in every direction. Consequently, stable structures for ionic compounds result (1) when ions of one charge are surrounded by as many ions as possible of the opposite...
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Ionic Bonding and Electron Transfer02:48

Ionic Bonding and Electron Transfer

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Ions are atoms or molecules bearing an electrical charge. A cation (a positive ion) forms when a neutral atom loses one or more electrons from its valence shell, and an anion (a negative ion) forms when a neutral atom gains one or more electrons in its valence shell. Compounds composed of ions are called ionic compounds (or salts), and their constituent ions are held together by ionic bonds: electrostatic forces of attraction between oppositely charged cations and anions. 
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Lattice Centering and Coordination Number02:33

Lattice Centering and Coordination Number

12.9K
The structure of a crystalline solid, whether a metal or not, is best described by considering its simplest repeating unit, which is referred to as its unit cell. The unit cell consists of lattice points that represent the locations of atoms or ions. The entire structure then consists of this unit cell repeating in three dimensions. The three different types of unit cells present in the cubic lattice are illustrated in Figure 1.
Types of Unit Cells
Imagine taking a large number of identical...
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Energy Bands in Solids01:01

Energy Bands in Solids

2.1K
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
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Electron Configuration of Multielectron Atoms03:26

Electron Configuration of Multielectron Atoms

65.4K
The alkali metal sodium (atomic number 11) has one more electron than the neon atom. This electron must go into the lowest-energy subshell available, the 3s orbital, giving a 1s22s22p63s1 configuration. The electrons occupying the outermost shell orbital(s) (highest value of n) are called valence electrons, and those occupying the inner shell orbitals are called core electrons. Since the core electron shells correspond to noble gas electron configurations, we can abbreviate electron...
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Atomic Configuration of Point Defect Clusters in Ion-Irradiated Silicon Carbide.

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  • 1National Tsing-Hua University, Department of Engineering and System Science, 30013, Hsinchu, Taiwan.

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Radiation-induced swelling in Silicon Carbide (SiC) is caused by vacancy-rich defect clusters. Unrecovered interstitials lead to lattice expansion, crucial for accident-tolerant nuclear fuel cladding.

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Area of Science:

  • Nuclear Materials Science
  • Materials Science and Engineering
  • Radiation Damage in Solids

Background:

  • Silicon Carbide (SiC) is a key material for accident-tolerant fuel cladding in nuclear reactors.
  • Radiation-induced swelling in SiC at low temperatures is linked to nanoscale defect clusters.
  • The precise structure and swelling mechanism of these defects in SiC remain unclear.

Purpose of the Study:

  • To elucidate the atomic configuration of defect clusters in irradiated Silicon Carbide.
  • To determine the mechanism driving radiation swelling in SiC.
  • To understand the role of point defects in lattice expansion of SiC.

Main Methods:

  • Utilized Cs-corrected transmission electron microscopy for atomic-scale imaging of defects.
  • Employed molecular dynamics simulations to investigate defect behavior and swelling mechanisms.
  • Analyzed the distribution and nature of irradiation-induced point defects.

Main Results:

  • Identified irradiation-induced point defect clusters as predominantly vacancy-rich.
  • Demonstrated that lattice expansion in SiC is caused by the homogeneous distribution of unrecovered interstitials.
  • Provided atomic-level insights into the structure of black spot defects in SiC.

Conclusions:

  • The study clarifies the defect structure responsible for radiation swelling in SiC.
  • Findings confirm vacancy-rich clusters and interstitial distribution as key to SiC swelling.
  • Results are critical for the development of advanced accident-tolerant nuclear fuel cladding.