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Updated: Aug 16, 2026

Development of a 3D Graphene Electrode Dielectrophoretic Device
Published on: June 22, 2014
Interface-Engineered Charge-Transport Properties in Benzenedithiol Molecular Electronic Junctions via Chemically
Yeonsik Jang, Sung-Joo Kwon1, Jaeho Shin2
1Department of Materials Science and Engineering, Pohang University of Science and Technology , Pohang, Gyeongbuk 37673, Korea.
Abstract:
In this study, we fabricated and characterized vertical molecular junctions consisting of self-assembled monolayers of benzenedithiol (BDT) with a p-doped multilayer graphene electrode. The p-type doping of a graphene film was performed by treating pristine graphene (work function of ∼4.40 eV) with trifluoromethanesulfonic (TFMS) acid, producing a significantly increased work function (∼5.23 eV). The p-doped graphene-electrode molecular junctions statistically showed an order of magnitude higher current density and a lower charge injection barrier height than those of the pristine graphene-electrode molecular junctions, as a result of interface engineering. This enhancement is due to the increased work function of the TFMS-treated p-doped graphene electrode in the highest occupied molecular orbital-mediated tunneling molecular junctions. The validity of these results was proven by a theoretical analysis based on a coherent transport model that considers asymmetric couplings at the electrode-molecule interfaces.
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