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Single-silicon CCD-CMOS platform for multi-spectral detection from terahertz to x-rays
Optics Letters
|November 16, 2017
Summary
Silicon CMOS technology significantly enhances terahertz imaging sensitivity, nearly closing the gap with electronic imagers. This breakthrough enables a single silicon detector platform from mid-infrared to terahertz frequencies.
Area of Science:
- Semiconductor physics
- Terahertz imaging technology
- Advanced detector platforms
Background:
- Charge-coupled devices (CCDs) are established for visible and X-ray imaging but struggle with low-energy terahertz (THz) photons.
- Current THz imaging relies on low-resolution bolometer technologies.
- Silicon CCDs show limited sensitivity for THz photon detection.
Purpose of the Study:
- To investigate silicon Complementary Metal-Oxide-Semiconductor (CMOS) technology for enhanced THz detection sensitivity.
- To extend the low-frequency cutoff of THz imaging.
- To establish silicon as a single detector platform across multiple spectral ranges.
Main Methods:
- Utilized silicon CMOS technology for terahertz photon detection.
- Characterized detection sensitivity and frequency response.
- Compared performance against traditional CCDs.
Main Results:
- Silicon CMOS technology demonstrated a detection sensitivity nearly two orders of magnitude higher than CCDs.
- Extended the terahertz imaging low-frequency cutoff to below 2 THz.
- Confirmed silicon CMOS sensitivity across mid-infrared and X-ray ranges.
Conclusions:
- Silicon CMOS technology offers a significant advancement for high-sensitivity terahertz imaging.
- Introduced a versatile silicon detector platform covering 1 EHz to 2 THz.
- Overcame challenges in spatially overlapping multi-spectrum radiation for advanced research facilities.
