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Related Concept Videos

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Spectroscopic Study of Quantized Breakdown Voltage States of the Quantum Hall Effect.

Journal of research of the National Institute of Standards and Technology·2023
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Potential and Current Distributions Calculated Across a Quantum Hall Effect Sample at Low and High Currents.

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Precision Tests of a Quantum Hall Effect Device DC Equivalent Circuit Using Double-Series and Triple-Series Connections.

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Observation and an Explanation of Breakdown of the Quantum Hall Effect.

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Dependence of Quantized Hall Effect Breakdown Voltage on Magnetic Field and Current.

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Using Quantized Breakdown Voltage Signals to Determine the Maximum Electric Fields in a Quantum Hall Effect Sample.

M E Cage1, C F Lavine1

  • 1National Institute of Standards and Technology, Gaithersburg, MD 20899-0001.

Journal of Research of the National Institute of Standards and Technology
|November 21, 2017
PubMed
Summary
This summary is machine-generated.

Researchers estimated the electric field in a GaAs/AlGaAs heterostructure quantum Hall effect sample during breakdown. They used the quasielastic inter-Landau level scattering (QUILLS) model to analyze voltage drops and determine electric field values.

Keywords:
breakdownelectric fieldsquantized dissipationquantized voltage statesquantum Hall effectquasi-elastic inter-Landau level scatteringtwo-dimensional electron gas

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Area of Science:

  • Condensed Matter Physics
  • Semiconductor Heterostructures

Background:

  • The quantum Hall effect (QHE) is a phenomenon observed in 2D electron systems at low temperatures and high magnetic fields.
  • Understanding the breakdown regime of the QHE is crucial for device applications and fundamental physics.
  • GaAs/AlGaAs heterostructures are model systems for studying the QHE due to their high electron mobility.

Purpose of the Study:

  • To estimate the maximum electric field values across the width of a GaAs/AlGaAs heterostructure sample in the quantum Hall effect breakdown regime.
  • To investigate the relationship between current and electric field strength during breakdown.
  • To provide a physical model for detecting breakdown phenomena via electrical measurements.

Main Methods:

  • Utilizing a GaAs/AlGaAs heterostructure sample.
  • Applying various current levels to induce the breakdown regime of the quantum Hall effect.
  • Measuring quantized longitudinal voltage drops along the sample length.
  • Employing the quasielastic inter-Landau level scattering (QUILLS) model to calculate the electric field.

Main Results:

  • Estimation of maximum electric field values across the sample width during breakdown.
  • Correlation of electric field strength with applied current levels.
  • Development of a method to detect QUILLS transitions through longitudinal voltage measurements.

Conclusions:

  • The QUILLS model provides a viable method for estimating electric fields in the breakdown regime of QHE samples.
  • Longitudinal voltage measurements can reveal transitions occurring across the sample width.
  • This research offers insights into the physics of quantum Hall effect breakdown in semiconductor heterostructures.