Related Experiment Video
Updated: Feb 18, 2026

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer
Published on: January 10, 2017
Regioregular Bis-Pyridal[2,1,3]thiadiazole-Based Semiconducting Polymer for High-Performance Ambipolar Transistors
Chunguang Zhu1, Zhiyuan Zhao2, Huajie Chen1
1Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University , Xiangtan 411105, People's Republic of China.
Abstract:
We report a regioregular bis-pyridal[2,1,3]-thiadiazole (BPT) acceptor strategy to construct the first ambipolar pyridal[2,1,3]thiadiazole-based semiconducting polymer (PBPTV). The use of BPT unit enables PBPTV to achieve high electron affinity, low LUMO level, and extended π-conjugation. All these factors provide PBPTV with encouraging hole and electron mobilities up to 6.87 and 8.49 cm2 V-1 s-1, respectively. Our work demonstrates that the BPT unit is a promising building block for designing high-performance electron-transporting semiconductors in organic electronics.
Related Concept Videos
Bipolar Junction Transistor
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

