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Related Experiment Video

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Solution-Processed Flexible Organic Ferroelectric Phototransistor.

Qiang Zhao1,2, Hanlin Wang1,2, Lang Jiang1

  • 1Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China.

ACS Applied Materials & Interfaces
|November 25, 2017
PubMed
Summary
This summary is machine-generated.

We developed ferroelectric organic phototransistors (OPTs) by integrating a ferroelectric insulator with a red light sensitive semiconductor. These OPTs exhibit tunable dark current and flexible signal-to-noise ratios for advanced photodetection.

Keywords:
P(VDF-TrFE)nonvolatile memory (NVM)organic ferroelectric field-effect transistor (OFeFET)organic field-effect transistor (OFET)organic phototransistor (OPT)

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Area of Science:

  • Organic electronics
  • Semiconductor devices
  • Photodetection technologies

Background:

  • Organic phototransistors (OPTs) are crucial for plastic electronic devices.
  • Controlling dark current and signal-to-noise ratio in OPTs remains a challenge.
  • Ferroelectric materials offer unique properties for modulating electronic devices.

Purpose of the Study:

  • To integrate a ferroelectric insulator with a red light sensitive polymeric semiconductor.
  • To create ferroelectric organic phototransistors (OPTs) with tunable characteristics.
  • To explore the potential of ferroelectricity in enhancing OPT performance.

Main Methods:

  • Integration of Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as a ferroelectric insulator.
  • Use of Poly(dpp-TzBT) as a red light sensitive polymeric semiconductor.
  • Fabrication and characterization of ferroelectric organic phototransistors (OPTs).

Main Results:

  • Demonstrated tunable dark current levels in OPTs, ranging from 1 nA to 100 nA, due to remnant polarization.
  • Achieved a flexible photo-to-dark (signal-to-noise) ratio without gate bias application after electrical programming.
  • Showcased good linearity in detecting a wide range of light signals.

Conclusions:

  • Ferroelectric integration enables nonvolatile and tunable dark current states in OPTs.
  • The developed OPTs offer a promising platform for novel photodetection applications in plastic electronics.
  • Understanding the tuning mechanism advances the operational principles of OPTs.