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Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
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Metal-assisted exfoliation of few-layer black phosphorus with high yield
Liao Guan1, Boran Xing, Xinyue Niu
1Department of Physics & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China. yewuwang@zju.edu.cn physjsha@zju.edu.cn.
Chemical Communications (Cambridge, England)
|November 25, 2017
Abstract:
We introduce a metal-assisted exfoliation method to produce few-layer black phosphorus with the lateral size larger than 50 μm and the area 100 times larger than those exfoliated using the normal "scotch-tape" technique. Using a field effect transistor it was found the hole mobility is 68.6 cm2 V-1 s-1 and the current on/off ratio can reach about 2 × 105.
