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Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle
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Graphene oxide reduction by solid-state laser irradiation for bolometric applications.

Vladislav A Kondrashov1, Nikolay S Struchkov2, Roman Yu Rozanov2

  • 1Skolkovo Institute of Science and Technology, Nobel str. 3, 143026, Moscow, Russia.

Nanotechnology
|November 29, 2017
PubMed
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Researchers developed a laser-based method to pattern reduced graphene oxide (GO) films. This technique precisely controls electrical properties and creates conductive patterns with excellent bolometric response for radiation detection.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Graphene oxide (GO) is a promising material for various electronic applications.
  • Precise patterning of GO films is crucial for fabricating functional devices.
  • Laser-based reduction offers a non-contact method for modifying GO properties.

Purpose of the Study:

  • To present a method for patterning reduced graphene oxide (GO) films using a 445 nm solid-state laser.
  • To investigate the influence of laser fluence and argon concentration on GO reduction and film quality.
  • To demonstrate the fabrication of conductive patterns with tunable electrical properties and high-speed bolometric response.

Main Methods:

  • Patterning of GO films using a 445 nm solid-state laser with adjustable fluence (0.2-20 kJ cm⁻²).

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  • Optimization of argon concentration in air (optimal at 90%) for high-quality reduced GO films.
  • Characterization of electrical properties (sheet resistance, Raman peak intensity ratios) and bolometric response.
  • Main Results:

    • Achieved precise patterning of GO films, creating conductive patterns with a sheet resistance of 189 Ohm/□ and ∼1 μm thickness.
    • Demonstrated control over film resistance and Raman peak intensity ratios (IG/ID, IG/I2D) by varying laser energy density.
    • Fabricated structures exhibited excellent high-speed and sensitive bolometric response to visible light radiation.

    Conclusions:

    • The developed laser-based method enables controlled reduction and patterning of GO films.
    • The process allows for tunable electrical properties and the creation of functional conductive patterns.
    • The fabricated reduced GO structures are suitable for high-performance bolometric radiation detection applications.