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Related Experiment Video

Updated: Feb 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Low-threshold optically pumped lasing in highly strained germanium nanowires.

Shuyu Bao^1,2, Daeik Kim³, Chibuzo Onwukaeme³

¹School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore.

Nature Communications

|November 30, 2017

Summary

Researchers developed a low-threshold group IV laser using strained germanium nanowires. This breakthrough overcomes previous limitations, paving the way for efficient photonic-integrated circuits.

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Last Updated: Feb 18, 2026

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Area of Science:

Optoelectronics
Materials Science
Nanotechnology

Background:

Efficient group IV lasers are crucial for photonic-integrated circuits (PICs).
Existing group IV lasers have impractically high thresholds due to unfavorable bandstructures.
Highly strained germanium offers potential for low-threshold lasing but has not been demonstrated.

Purpose of the Study:

To demonstrate a low-threshold, compact group IV laser using strained germanium.
To investigate the lasing properties of germanium nanowires under uniaxial tensile strain.

Main Methods:

Fabrication of germanium nanowires.
Application of 1.6% uniaxial tensile strain to the germanium nanowire.
Optical pumping experiments at 83 K to observe lasing.

Main Results:

Successful demonstration of a compact group IV laser with a low threshold.
Observation of multimode lasing in strained germanium nanowires.
Achieved an optical pumping threshold density of approximately 3.0 kW cm⁻² at 83 K.

Conclusions:

Highly strained germanium is a viable low-threshold gain medium for group IV lasers.
This work overcomes previous limitations in group IV laser technology.
Opens new avenues for developing group IV lasers for PICs.