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Updated: Feb 17, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
Published on: November 11, 2013
Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile
Jin Hyuck Heo1, Dong Hee Shin1, Sang Hwa Moon1
1Department of Chemical and Biological Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 136-713, Republic of Korea.
Abstract:
The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endurance, >104 s data retention time, ~0.7 V set, and ~-0.61 V re-set bias voltage.
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