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Homo-endotaxial one-dimensional Si nanostructures.

Jiaming Song1, Bethany M Hudak, Hunter Sims

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. snijderspc@ornl.gov.

Nanoscale
|December 7, 2017
PubMed
Summary

Researchers created novel one-dimensional (1D) silicon nanostructures with unique lattice structures embedded within silicon. These homo-endotaxial nanostructures offer potential for advanced nanoelectronic devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • One-dimensional (1D) nanostructures exhibit unique electronic properties and enhanced functionality.
  • Their properties are highly sensitive to the surrounding environment due to their nanoscale dimensions.

Purpose of the Study:

  • To create and characterize novel 1D homo-endotaxial silicon (Si) nanostructures.
  • To investigate their formation mechanisms and properties for potential nanoelectronic applications.

Main Methods:

  • Scanning tunneling microscopy and spectroscopy (STM/STS)
  • Scanning transmission electron microscopy (STEM)
  • Density functional theory (DFT)
  • Conductive atomic force microscopy (C-AFM)

Main Results:

  • Successfully synthesized 1D Si nanostructures with lattice structures distinct from the host Si diamond lattice.
  • Demonstrated control over nanostructure formation, resulting in either fully embedded or amorphous Si-covered structures.
  • Identified dependence of structure on kinetic growth constraints.

Conclusions:

  • Homo-endotaxial 1D Si nanostructures can be fabricated within the silicon platform.
  • These structures possess unique properties influenced by their embedded environment.
  • They hold promise for integration into advanced silicon-based nanoelectronic devices.