Related Experiment Video
Updated: Feb 17, 2026
05:57
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
8.6K
Monolithic III-nitride photonic integration toward multifunctional devices
Optics Letters
|December 8, 2017
Summary
Researchers developed an integrated InGaN photonic circuit on a silicon platform. This transmitter-waveguide-receiver system demonstrates efficient in-plane light transmission for advanced optical applications.
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Materials Science
Background:
- III-nitride semiconductors offer versatile functionalities for integrated systems.
- Developing monolithic photonic circuits is crucial for advanced optoelectronic devices.
Purpose of the Study:
- To fabricate and characterize a monolithic InGaN photonic circuit comprising a transmitter, waveguide, and receiver.
- To demonstrate in-plane light transmission and reception on an III-nitride-on-silicon platform.
Main Methods:
- Fabrication of InGaN/GaN multiple-quantum-well structures for transmitter and receiver.
- Integration of an 8 μm wide, 200 μm long InGaN waveguide for light coupling.
- Characterization of light emission, transmission, and detection functionalities.
Main Results:
- Successful fabrication of a monolithic transmitter, waveguide, and receiver system.
- Demonstration of independent light emission and detection by transmitter and receiver.
- Experimental validation of multi-dimensional light transmissions at 200 Mb/s.
Conclusions:
- The developed InGaN photonic circuit enables in-plane light transmission systems.
- This technology opens pathways for III-nitride multicomponent systems with integrated optical functions.
- Potential applications span various fields requiring visible region optical communication and sensing.
