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High-Resolution Valley Spectroscopy of Si Quantum Dots
X Mi1, Csaba G Péterfalvi2, Guido Burkard2
1Department of Physics, Princeton University, Princeton, New Jersey 08544, USA.
Physical Review Letters
|December 9, 2017
Summary
We studied a silicon/silicon-germanium double quantum dot with a single electron. This system allows for efficient extraction of valley splittings and tunnel couplings using microwave photons.
Area of Science:
- Quantum physics
- Condensed matter physics
- Semiconductor spintronics
Background:
- Quantum dots (QDs) are crucial for quantum computing.
- Silicon-based quantum dots offer scalability.
- Understanding valley states in silicon is key for qubit control.
Purpose of the Study:
- Investigate valley states in a silicon/silicon-germanium double quantum dot.
- Develop a method to efficiently extract valley splitting and tunnel couplings.
- Explore the influence of temperature and bias on valley state occupation.
Main Methods:
- Utilized an accumulation mode Si/SiGe double quantum dot with a single electron.
- Coupled the double quantum dot to microwave photons in a superconducting cavity.
- Applied cavity input-output theory and a four-level double quantum dot model.
Main Results:
- Observed dispersive features in cavity transmission due to double quantum dot valley states.
- Demonstrated that temperature and source-drain bias increase valley state occupation and signal.
- Successfully extracted valley splittings and inter- and intravalley tunnel couplings.
Conclusions:
- The studied system provides a sensitive probe of silicon double quantum dot valley states.
- Cavity-based measurements offer an efficient method for characterizing valley properties.
- This work contributes to the development of silicon quantum technologies.
