Related Experiment Video
Updated: Feb 17, 2026
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
4.4K
Remote control of resistive switching in TiO2 based resistive random access memory device
Dwipak Prasad Sahu1, S Narayana Jammalamadaka2
1Magnetic Materials and Device Physics Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Hyderabad, 502 285, India.
Scientific Reports
|December 10, 2017
Summary
This study demonstrates magnetic field control of resistive switching in Ag/TiO2/FTO memory devices. The Lorentz force influences resistance states, enabling reproducible, reversible, and remotely controllable multi-bit data storage.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Electrical Engineering
Background:
- Resistive random access memory (RRAM) devices offer promising solutions for next-generation data storage.
- Controlling the resistive switching behavior of RRAM devices is crucial for enhancing their performance and functionality.
- External stimuli, such as magnetic fields, present an avenue for novel control mechanisms in RRAM.
Purpose of the Study:
- To investigate the magnetic field control of bipolar resistive switching in an Ag/TiO2/FTO based RRAM device.
- To elucidate the role of the Lorentz force in modulating the device's resistance states.
- To assess the endurance and controllability of the device under magnetic field influence for potential multi-bit data storage applications.
Main Methods:
- Fabrication of Ag/TiO2/FTO based RRAM devices.
- Characterization of device performance using current-voltage (I-V) measurements.
- Analysis of device behavior under varying magnetic field conditions.
- Evaluation of endurance characteristics through repeated switching cycles.
Main Results:
- Demonstrated magnetic field control over bipolar resistive switching in the Ag/TiO2/FTO device.
- Observed an abrupt resistance change requiring higher voltage in the low resistance state under magnetic field, attributed to the Lorentz force.
- Confirmed reproducible, reversible, and controllable switching between 'on' and 'off' states with no degradation after repeated cycling.
- Showcased magnetic field influence on 'on' and 'off' states during endurance testing.
Conclusions:
- The Lorentz force significantly influences the resistance state of the Ag/TiO2/FTO RRAM device.
- The device exhibits robust endurance and reliable switching, making it suitable for practical applications.
- Remote magnetic field control of resistive switching opens possibilities for advanced multi-bit data storage solutions.
Related Concept Videos
01:14Design Example: Resistive Touchscreen
771
A device engineer plays a crucial role in designing user interfaces for mobile devices. One such interface is the resistive touchscreen, which fundamentally consists of two metallic layers: a flexible upper layer and a rigid lower layer, separated by a narrow gap. The high resistance between these two layers is a key characteristic of this design.
When a user touches the screen, the two layers make contact at a specific point known as the touchpoint. This contact reduces the resistance between...
When a user touches the screen, the two layers make contact at a specific point known as the touchpoint. This contact reduces the resistance between...
771
01:25MOS Capacitor
1.6K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.6K
00:51Non-ohmic Devices
1.5K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.5K
01:16MOSFET
1.4K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
1.4K
01:22MOSFET: Enhancement Mode
856
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
856
01:22Switching of BJT
898
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
898