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Updated: Feb 17, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Fine electron biprism on a Si-on-insulator chip for off-axis electron holography
Martial Duchamp1, Olivier Girard2, Giulio Pozzi3
1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore ; Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C) and Peter Grünberg Institute (PGI), Forschungszentrum Jülich, 52425 Jülich, Germany.
Abstract:
Off-axis electron holography allows both the amplitude and the phase shift of an electron wavefield propagating through a specimen in a transmission electron microscope to be recovered. The technique requires the use of an electron biprism to deflect an object wave and a reference wave to form an interference pattern. Here, we introduce an approach based on semiconductor processing technology to fabricate fine electron biprisms with rectangular cross-sections. By performing electrostatic calculations and preliminary experiments, we demonstrate that such biprisms promise improved performance for electron holography experiments.

