Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Transport01:21

Carrier Transport

1.0K
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.0K
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.1K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.1K
P-N junction01:11

P-N junction

1.4K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.4K
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.3K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.3K
Semiconductors01:22

Semiconductors

1.6K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.6K
Drift Velocity01:19

Drift Velocity

5.6K
The high speed of electrical signals results from the fact that the force between charges acts rapidly at a distance. Thus, when a free charge is forced into a wire, the incoming charge pushes other charges ahead due to the repulsive force between like charges. These moving charges move the charges farther down the line. The density of charge in a system cannot easily be increased, so the signal is passed on rapidly. The resulting electrical shock wave moves through the system at nearly the...
5.6K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Design of PV Cells and LEDs Robust to Grid Shadowing Losses in Emission.

ACS applied optical materials·2025
Same author

Temperature Dependence of Reaction Kinetics in a Hybrid GaAs Solar-Fuel Cell Device.

The journal of physical chemistry letters·2024
Same author

Ultrasensitive Monolithic Dopamine Microsensors Employing Vertically Aligned Carbon Nanofibers.

Advanced healthcare materials·2024
Same author

Chemovoltaic effect for renewable liquid and vapor fuels on semiconductor surfaces.

ChemSusChem·2024
Same author

Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics.

ACS applied materials & interfaces·2023
Same author

Electron Injection in Metal Assisted Chemical Etching as a Fundamental Mechanism for Electroless Electricity Generation.

The journal of physical chemistry letters·2022

Related Experiment Video

Updated: Feb 17, 2026

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

9.3K

Diffusion-Driven Charge Transport in Light Emitting Devices.

Iurii Kim1, Pyry Kivisaari2, Jani Oksanen3

  • 1Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, 00076 Aalto, Finland. iurii.kim@aalto.fi.

Materials (Basel, Switzerland)
|December 13, 2017
PubMed
Summary

Researchers review diffusion-driven charge transport (DDCT) emitters, a novel design for gallium nitride (GaN) light-emitting diodes (LEDs). This approach enables unconventionally placed active regions and reduces resistive losses in high-power devices.

Keywords:
diffusion injectionlateral epitaxial overgrowthlight-emitting diodes (LEDs)selective-area growth (SAG)

More Related Videos

Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter
06:25

Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter

Published on: November 7, 2025

558
Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.8K

Related Experiment Videos

Last Updated: Feb 17, 2026

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

9.3K
Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter
06:25

Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter

Published on: November 7, 2025

558
Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.8K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Optoelectronics

Background:

  • Modern inorganic light-emitting diode (LED) designs rely on double heterojunctions (DHJs), a structure unchanged for decades.
  • Conventional DHJs hinder nanostructured active regions (ARs) and cause resistive losses in high-power devices.
  • Gallium nitride (GaN) based LEDs are crucial for energy-efficient lighting.

Purpose of the Study:

  • To review recent advancements in gallium nitride (GaN) based diffusion-driven charge transport (DDCT) emitter designs.
  • To explore the potential of DDCT technology for optoelectronics and microelectronics.
  • To highlight the advantages of DDCT over conventional double heterojunction (DHJ) designs.

Main Methods:

  • Review of recent scientific literature on DDCT devices.
  • Analysis of the charge carrier transport mechanism in DDCT emitters.
  • Comparison of DDCT and DHJ device performance characteristics.

Main Results:

  • DDCT devices allow charge carriers to be injected into unconventionally placed ARs via bipolar diffusion.
  • This design facilitates the integration of surface ARs, such as nanowires and quantum wells.
  • DDCT offers a promising pathway to mitigate resistive losses in high-power semiconductor LEDs.

Conclusions:

  • DDCT represents a significant innovation in LED design, overcoming limitations of traditional DHJs.
  • The technology holds potential for next-generation optoelectronic and microelectronic applications.
  • Further research into GaN-based DDCT devices is warranted to fully realize their capabilities.