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Tunneling Hot Spots in Ferroelectric SrTiO3
Haidong Lu1, Daesu Lee2, Konstantin Klyukin3
1Department of Physics and Astronomy, University of Nebraska , Lincoln, Nebraska 68588, United States.
Nano Letters
|December 14, 2017
Summary
Polar defects in strontium titanate (SrTiO3) ultrathin films drive both ferroelectricity and conductive "hot spots." These hot spots exhibit polarization-controlled tunneling, enabling new resistive switching mechanisms and mechanically tunable electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanoscience
Background:
- Strontium titanate (SrTiO3) is a key material in oxide electronics.
- Recent research reveals novel nanoscale phenomena in ultrathin SrTiO3 films and interfaces.
- Room-temperature ferroelectricity in strain-free SrTiO3 films is linked to Ti_Sr antisite defects.
Purpose of the Study:
- Investigate the role of polar defects in ultrathin SrTiO3 films.
- Elucidate the mechanism behind highly conductive channels ('hot spots').
- Explore the relationship between ferroelectric polarization and hot spot conductivity.
Main Methods:
- Scanning probe microscopy (SPM) experimental studies.
- Theoretical modeling and simulations.
- Analysis of defect-assisted tunneling and ferroelectric polarization.
Main Results:
- Polar Ti_Sr antisite defects induce both ferroelectricity and conductive hot spots in SrTiO3 films.
- Hot spots arise from resonant tunneling through defect-induced localized electronic states.
- Tunneling conductance in hot spots is controlled by ferroelectric polarization.
Conclusions:
- Ferroelectric polarization governs defect-assisted tunneling, revealing a new resistive switching mechanism.
- Findings have implications for ferroelectric tunnel junctions and oxide heterostructures.
- Mechanical stress can modulate hot spot conductivity, suggesting potential for tunable electronic devices.
