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Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot
Optics Express
|December 17, 2017
Summary
We demonstrate triggered single-photon emission from Indium Gallium Arsenide/Gallium Arsenide quantum dots (QDs) in the telecom O-band. This breakthrough enables high-purity single photon generation for advanced optical applications.
Area of Science:
- Quantum optics
- Semiconductor physics
- Materials science
Background:
- Quantum dots (QDs) are crucial for single-photon sources.
- Telecom O-band emission is vital for optical communications.
- Achieving triggered, high-purity single-photon emission remains a challenge.
Purpose of the Study:
- To experimentally demonstrate triggered single-photon emission at the telecom O-band.
- To utilize Indium Gallium Arsenide/Gallium Arsenide quantum dots (QDs) for this purpose.
- To achieve high purity in the generated single photons.
Main Methods:
- Metal-organic vapor-phase epitaxy (MOVPE) for QD growth.
- Micro-photoluminescence excitation spectroscopy to identify excitonic states.
- Pulsed p-shell resonant excitation for triggered emission.
Main Results:
- Successful triggered single-photon emission demonstrated from In(Ga)As/GaAs QDs.
- Telecom O-band emission achieved.
- High purity evidenced by a low second-order correlation function (g(2)(0) = 0.03, ~0.005 after background correction).
Conclusions:
- The study successfully established a high-purity triggered single-photon source.
- The developed method is effective for O-band emission using GaAs-based QDs.
- This work paves the way for advanced quantum communication and computing applications.
