Controlling Mobility in Perovskite Oxides by Ferroelectric Modulation of Atomic-Scale Interface Structure

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Coherent and epitaxial interfaces enable electric field-driven devices.
• Atomic-scale structural and electronic effects at interfaces control device properties.
• Conventional field-effect devices rely on carrier density modification.

Purpose of the Study:

• To design and demonstrate an atomically abrupt epitaxial perovskite heterostructure.
• To engineer interfacial effects for unique electronic device properties.
• To achieve large, reversible conductivity modulation via electric fields.

Main Methods:

• Utilizing first-principles theory for heterostructure design.
• Fabricating and characterizing an epitaxial perovskite heterostructure (PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$/LaNiO$_{3}$).
• Investigating the coupling of polar atomic motions to structural distortions.

Main Results:

• Achieved record conductivity modulation exceeding 1000%.
• Demonstrated control of channel mobility through atomic-scale interfacial effects.
• Showcased reversible changes in channel mobility.

Conclusions:

• Purely interfacial effects can be engineered for significant electronic responses.
• Atomic-scale distortions propagating across interfaces offer a new paradigm for device control.
• This approach enables unique electronic device properties and large external field responses.