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Updated: Feb 16, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Adsorption of H2, O2, H2O, OH and H on monolayer MoS2
F Ferreira1, A Carvalho2, Í J M Moura1,3
1Centro de Física and Departamento de Física and QuantaLab, Universidade do Minho, Campus de Gualtar, Braga 4710-057, Portugal.
Abstract:
Hydrogen and hydrogen-containing gases are commonly used as reductants in chemical vapor deposition growth of MoS2. Here, we consider the defects resulting from the presence of hydrogen during growth and the resulting electronically active defects. In particular, we find that the interstitial hydrogen defect is a negative-U center with amphoteric donor and acceptor properties. Additionally, we consider the effects of interaction with water and oxygen. The defects are analysed using density functional theory calculations.
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