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XPS study of graphene oxide reduction induced by (100) and (111)-oriented Si substrates
F Priante1, M Salim2, L Ottaviano1,3
1Dipartimento di Scienze Fisiche e Chimiche (DSFC), Università dell'Aquila, Via Vetoio 10, I-67100 L'Aquila, Italy.
Nanotechnology
|December 21, 2017
Summary
Direct reduction of graphene oxide (GO) by silicon substrates is not effective. Thermal annealing is required for GO reduction, regardless of substrate type or orientation, indicating no direct substrate-mediated reduction.
Area of Science:
- Materials Science
- Surface Chemistry
- Nanotechnology
Background:
- Graphene oxide (GO) reduction aims to restore graphene properties.
- Conventional methods include high-temperature annealing and chemical reduction.
- A novel approach involves direct reduction by etched silicon (Si) substrates.
Purpose of the Study:
- To investigate the interaction between graphene oxide (GO) and Si substrates.
- To determine if Si substrates can directly reduce GO.
- To explore the influence of substrate composition and orientation on GO reduction.
Main Methods:
- X-ray photoelectron spectroscopy (XPS) was used to analyze Si-GO interactions.
- Ethanol (EtOH) was used as a solvent for GO to prevent substrate oxidation.
- Thermal annealing was performed under ultra-high vacuum (UHV) conditions.
- Si(100), Si(111), and gold (Au) substrates were investigated.
Main Results:
- XPS analysis revealed GO reduction occurred on all investigated substrates.
- Significant GO reduction was only observed after thermal annealing.
- No direct reduction of GO by the Si substrate was detected, irrespective of surface orientation.
Conclusions:
- The direct reduction of graphene oxide by etched silicon substrates is not a viable method.
- Thermal annealing is the primary driver for GO reduction in this context.
- Substrate composition and orientation do not play a direct role in the reduction process.
