Grain Boundary Modification via F4TCNQ To Reduce Defects of Perovskite Solar Cells with Excellent Device Performance

Solar cells based on hybrid organic-inorganic metal halide perovskites are being developed to achieve high efficiency and stability. However, inevitably, there are defects in perovskite films, leading to poor device performance. Here, we employ an additive-engineering strategy to modify the grain boundary (GB) defects and crystal lattice defects by introducing a strong electron acceptor of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) into perovskite functional layer. Importantly, it has been found that F4TCNQ is filled in GBs and there is a significant reduction of metallic lead defects and iodide vacancies in the perovskite crystal lattice. The bulk heterojunction perovskite-F4TCNQ film exhibits superior electronic quality with improved charge separation and transfer, enhanced and balanced charge mobility, as well as suppressed recombination. As a result, the F4TCNQ doped perovskite device shows excellent device performance, especially the reproducible high fill factor (up to 80%) and negligible hysteresis effect.