Stable and Reversible Lithium Storage with High Pseudocapacitance in GaN Nanowires

In this work, gallium nitride (GaN) nanowires (NWs) were synthesized by chemical vapor deposition (CVD) process. The hybrid electrode showed the capacity up to 486 mAh g^-1 after 400 cycles at 0.1 A g^-1. Even at 10 A g^-1, the reversible capacity can stabilize at 75 mAh g^-1 (after 1000 cycles). Pseudocapacitive capacity was defined by kinetics analysis. The dynamics analysis and electrochemical reaction mechanism of GaN with Li⁺ was also analyzed by ex situ XRD, HRTEM, and XPS results. These results not only cast new light on pseudocapacitance enhanced high-rate energy storage devices by self-assembled nanoengineering but also extend the application range of traditional binary III/V semiconductors.