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Solution-Processed Gallium-Tin-Based Oxide Semiconductors for Thin-Film Transistors.

Xue Zhang1, Hyeonju Lee2, Jungwon Kim3

  • 1Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea. zhangxue00@naver.com.

Materials (Basel, Switzerland)
|December 29, 2017
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Mixing gallium and tin oxide improves thin-film transistor performance. Optimizing the Ga:Sn ratio and annealing temperature is key for enhanced electrical properties in solution-processed oxide films.

Keywords:
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Area of Science:

  • Materials Science
  • Thin-Film Electronics
  • Semiconductor Physics

Background:

  • Gallium (Ga) and tin (Sn) oxide films are promising materials for thin-film transistors (TFTs).
  • Controlling the composition and processing of these oxides is crucial for optimizing TFT performance.
  • Solution-processed methods offer potential for cost-effective fabrication of oxide TFTs.

Purpose of the Study:

  • To investigate the impact of Ga and Sn composition on the structural, chemical, and electrical properties of Ga-Sn mixed oxide films.
  • To determine the optimal Ga:Sn ratio and annealing conditions for solution-processed Ga:Sn oxide TFTs.
  • To understand the relationship between film properties and TFT performance.

Main Methods:

  • Fabrication of Ga-Sn mixed oxide films using solution processing.
  • Thermogravimetric analysis (TGA) to determine optimal annealing temperatures.
  • X-ray diffraction (XRD) to analyze structural properties and crystallinity.
  • Characterization of film morphology (grain size, amorphous nature).
  • Fabrication and electrical characterization of Ga:Sn oxide TFTs, including field-effect mobility measurements.

Main Results:

  • Solution-processed oxide films were successfully produced via thermal annealing at 500 °C.
  • Increasing Ga:Sn ratio enhanced oxygen deficiency and reduced Sn oxide crystallinity.
  • Optimal Ga:Sn precursor sol ratio determined as 1.0:0.9 for TFT application.
  • Annealing at 900 °C significantly boosted TFT field-effect mobility from 0.02 to 1.03 cm²/Vs.

Conclusions:

  • Mixing Ga and Sn in oxide films significantly improves TFT electrical properties.
  • Both the mixing concentration ratio and annealing temperature are critical parameters influencing film properties and TFT performance.
  • Solution-processed Ga:Sn oxide films offer a viable route for high-performance TFTs.