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Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout
D D Sukachev1, A Sipahigil1, C T Nguyen1
1Department of Physics, Harvard University, 17 Oxford Street, Cambridge, Massachusetts 02138, USA.
Researchers achieved long spin coherence times for silicon-vacancy (SiV-) centers in diamond by cooling them to millikelvin temperatures. This breakthrough enhances their potential for quantum networks and quantum photonics applications.
Area of Science:
- Quantum physics
- Solid-state quantum systems
- Quantum optics
Background:
- The silicon-vacancy (SiV-) color center in diamond is a promising quantum system.
- Its optical transitions are suitable for quantum photonics and nanophotonic devices.
- Previous SiV- spin coherence times were limited by phonon interactions.
Purpose of the Study:
- To improve the spin coherence time of SiV- centers.
- To suppress phonon-induced dephasing in SiV- spin qubits.
- To establish SiV- centers as viable solid-state qubits for quantum networks.
Main Methods:
- Operating SiV- centers at cryogenic temperatures (below 500 mK).
- Utilizing spin-conserving optical transitions by aligning magnetic fields.
- Applying microwave fields for coherent spin control.
- Achieving single-shot spin readout.
Main Results:
- Phonon-induced dephasing suppressed by 5 orders of magnitude.
- Single-shot spin readout fidelity of 89% achieved.
- Spin coherence time (T2) of 13 ms demonstrated.
- Spin relaxation time (T1) exceeding 1 s at 100 mK.
Conclusions:
- SiV- centers exhibit significantly improved spin coherence at low temperatures.
- Coherent control and readout are feasible, enabling quantum applications.
- SiV- centers are a leading solid-state platform for quantum network development.
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