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Related Experiment Video

Updated: Feb 16, 2026

Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics

Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics

Published on: August 5, 2020

Ion implantation for deterministic single atom devices.

J L Pacheco¹, M Singh¹, D L Perry¹

¹Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.

The Review of Scientific Instruments

|January 1, 2018

Summary

This summary is machine-generated.

We achieved precise single-atom doping using focused ion beams and sensitive detectors. This enables the creation of custom single-atom devices for quantum computing and advanced materials.

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Area of Science:

Materials Science
Quantum Computing
Nanotechnology

Background:

Deterministic doping is crucial for fabricating advanced quantum devices.
Current methods often lack the precision for single-atom control.
Developing techniques for precise ion placement is essential for next-generation electronics.

Purpose of the Study:

To demonstrate deterministic doping at the single-atom level.
To present a platform for fabricating single-atom devices.
To enable precise placement of ions for quantum applications.

Main Methods:

Utilizing a direct-write focused ion beam (FIB) system for ion placement.
Employing solid-state ion detectors sensitive to single low-energy heavy ions.
Integrating nanostructures with ion detection capabilities.

Main Results:

Achieved deterministic positioning of single ions within 35 nm of a target.
Demonstrated sensitivity to single low-energy heavy ions.
Established a platform for fabricating single-atom devices.

Conclusions:

The developed platform enables precise single-atom doping.
This technique is applicable to materials like silicon and diamond for donor-based qubits and color centers.
Facilitates the creation of novel single-atom devices for quantum technologies.