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Updated: Feb 16, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices

Minhao Zhang1, Huaiqiang Wang2, Kejun Mu3

  • 1National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University , Nanjing 210093, China.

ACS Nano
|January 3, 2018
PubMed

Keywords:
intersurface couplingtopological critical pointtopological insulatorstopological phase transitiontriaxial vector magnetoresistance

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