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Spin-Orbit Semimetal SrIrO_{3} in the Two-Dimensional Limit
D J Groenendijk1, C Autieri2, J Girovsky1
1Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.
Physical Review Letters
|January 6, 2018
Summary
Ultrathin strontium iridate (SrIrO3) films transition from semimetallic to insulating states below 4 unit cells. This transition is driven by enhanced spin fluctuations and requires antiferromagnetic order for gap opening.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid State Physics
Background:
- Strontium iridate (SrIrO3) is a correlated oxide material exhibiting complex electronic behaviors.
- Understanding thickness-dependent properties is crucial for tuning material functionalities.
Purpose of the Study:
- To investigate the electronic properties of ultrathin SrIrO3 films.
- To identify the critical thickness for electronic phase transitions.
- To elucidate the role of spin fluctuations and magnetic order in these transitions.
Main Methods:
- Variable thickness thin film growth of SrIrO3.
- Low-temperature magnetoconductance measurements.
- Scanning tunneling spectroscopy (STS).
- Density functional theory (DFT) calculations.
Main Results:
- A transition from a semimetallic to a correlated insulating state was observed below 4 unit cells of SrIrO3.
- Spin fluctuations significantly increase as the transition point is approached.
- STS measurements indicate SrIrO3 at 4 unit cells is near a band gap opening.
- DFT calculations confirm the critical thickness and the necessity of antiferromagnetic order for gap opening.
Conclusions:
- The electronic properties of ultrathin SrIrO3 are strongly thickness-dependent.
- Spin fluctuations play a critical role in the semimetal-to-insulator transition.
- Antiferromagnetic order is essential for the emergence of the insulating state in ultrathin SrIrO3.
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