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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.1K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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EDTA: Auxiliary Complexing Reagents01:26

EDTA: Auxiliary Complexing Reagents

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EDTA titrations are usually carried out in highly basic conditions, where the fully deprotonated form of EDTA, Y4−, actively complexes with the free metal ions in the solution. Several metal ions precipitate as hydrous oxide (hydroxides, oxides, or oxyhydroxides) under these conditions, lowering the concentration of free metal ions in the solution. For this reason, auxiliary complexing agents or ligands such as ammonia, tartrate, citrate, or triethanolamine are used in EDTA titrations to...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Solution Concentration and Dilution02:59

Solution Concentration and Dilution

135.6K
The relative amount of a given solution component is known as its concentration. Often, though not always, a solution contains one component with a concentration that is significantly greater than that of all other components. This component is called the solvent and may be viewed as the medium in which the other components are dispersed or dissolved. Solutions in which water is the solvent are, of course, very common on our planet. A solution in which water is the solvent is called an aqueous...
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Rapid reagent-less on-line H2O2 quantification in alkaline semiconductor etching solution, Part 2: Nephelometry

Roumen Zlatev1, Margarita Stoytcheva1, Benjamin Valdez1

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A novel nephelometric method enables rapid, reagent-free on-line quantification of hydrogen peroxide (H₂O₂) in semiconductor etching solutions. This method meets stringent industry demands for accuracy and speed.

Keywords:
H(2)O(2) quantificationNephelometrySemiconductors etching solutions

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Area of Science:

  • Analytical Chemistry
  • Materials Science
  • Chemical Engineering

Background:

  • Accurate hydrogen peroxide (H₂O₂) monitoring is critical in semiconductor manufacturing processes.
  • Existing methods for H₂O₂ quantification may be time-consuming or require reagents, hindering on-line application.

Purpose of the Study:

  • To develop and validate a simple, rapid, reagent-free nephelometric method for on-line H₂O₂ quantification.
  • To optimize the method for use in semiconductor etching solutions.

Main Methods:

  • A reagent-less nephelometric technique utilizing immobilized manganese dioxide (MnO₂) catalyst.
  • Measurement of scattered light intensity from oxygen gas suspension generated by H₂O₂ decomposition.
  • Optimization of parameters including light wavelength, agitation rate, temperature, and catalyst surface area.

Main Results:

  • Linear concentration range achieved from 10 to 150 mmol/L with a correlation coefficient of 0.9835.
  • Precision improved from 3.65% to 0.95% with a response time of 20-35 seconds.
  • Sensitivity of 8.01 µA/(mmol⁻¹·L) and a Limit of Detection (LOD) of 2.9 mmol/L were obtained.

Conclusions:

  • The developed nephelometric method is highly effective for on-line H₂O₂ quantification in semiconductor etching.
  • The method's performance characteristics satisfy the demanding requirements of the semiconductor industry.
  • This approach offers a significant advancement for process control and quality assurance in semiconductor fabrication.