Nitrogen implantation with a scanning electron microscope

Area of Science:

• Materials Science
• Surface Science
• Nanotechnology

Background:

• Established ion implantation methods require expensive particle accelerators.
• Limited accessibility hinders widespread adoption of ion implantation techniques.

Purpose of the Study:

• To introduce a novel, cost-effective ion implantation method using a scanning electron microscope (SEM).
• To demonstrate the feasibility of implanting ions into insulating materials using SEM.
• To create and characterize nitrogen vacancy (NV) centers in diamond via this new method.

Main Methods:

• Utilizing a scanning electron microscope (SEM) to ionize rest gas atoms/molecules via electron beam collisions.
• Employing surface potential buildup for ion acceleration and implantation into insulating samples.
• Implanting nitrogen ions (using 98% 15N-enriched gas) into diamond.
• Characterizing nitrogen vacancy centers using fluorescence confocal microscopy and optically detected magnetic resonance (ODMR).
• Demonstrating compatibility with electron beam lithography using PMMA resist.

Main Results:

• Successful ionization and implantation of nitrogen ions into diamond using SEM.
• Formation of nitrogen vacancy centers, confirmed by fluorescence confocal microscopy.
• Verification of 15N isotope incorporation using ODMR, confirming the implantation mechanism.
• Demonstration of patterned implantation using lithography techniques.

Conclusions:

• The SEM-based method offers a simple, accessible alternative for ion implantation.
• This technique enables the creation of specific defects, like NV centers, in insulating materials.
• The method's compatibility with lithography opens possibilities for nanoscale device fabrication.