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We observed voltage-dependent second-harmonic generation (SHG) in reduced-graphene oxide/silicon heterostructures. A model explains the SHG signal

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanoscience

Background:

  • Reduced-graphene oxide (rGO) exhibits unique electronic properties.
  • Heterostructures combining 2D materials with semiconductors are promising for novel devices.
  • Second-harmonic generation (SHG) is a key nonlinear optical phenomenon.

Purpose of the Study:

  • To investigate the voltage-dependent SHG signal at a reduced-graphene oxide/p-type silicon (rGO/p-Si) heterojunction.
  • To develop a qualitative model explaining the observed SHG characteristics.
  • To explore the potential of this system for tunable nonlinear photonic applications.

Main Methods:

  • Fabrication of an rGO/p-Si heterostructure.
  • Measurement of the SHG signal under varying applied bias voltages.
  • Development of a theoretical model incorporating interface potential and surface dipoles.

Main Results:

  • A distinct voltage-dependent SHG signal was observed.
  • A minimum in the SHG signal occurred at approximately -3 V bias.
  • The results were explained by a model considering the interplay of the depletion region and rGO surface dipole.

Conclusions:

  • The rGO/p-Si heterojunction exhibits tunable nonlinear optical properties.
  • The system offers control over surface-dipole moments and second-order nonlinearities.
  • Potential applications include tunable nonlinear photonic devices for second-harmonic generation and optical rectification.