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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
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Atomic Layer Deposition of Rhenium Disulfide
Jani Hämäläinen1, Miika Mattinen1, Kenichiro Mizohata2
1Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014, Helsinki, Finland.
Advanced Materials (Deerfield Beach, Fla.)
|January 10, 2018
Summary
Researchers developed a precise atomic layer deposition (ALD) method for rhenium disulfide (ReS2) thin films. This scalable technique enables ReS2 applications beyond traditional planar structures, advancing 2D materials research.
Area of Science:
- Materials Science and Engineering
- Condensed Matter Physics
- Nanotechnology
Background:
- Research in two-dimensional (2D) materials is rapidly expanding beyond graphene.
- Rhenium disulfide (ReS2), a 2D transition metal dichalcogenide, exhibits unique properties like direct bandgap and anisotropic characteristics.
- ReS2's decoupled monolayers offer potential for diverse applications without strict thickness limitations.
Purpose of the Study:
- To develop a highly controllable and precise atomic layer deposition (ALD) technique for fabricating ReS2 thin films.
- To demonstrate the growth of ReS2 films on large-area substrates.
- To extensively characterize the deposited ReS2 films and assess their suitability for advanced applications.
Main Methods:
- Atomic Layer Deposition (ALD) was employed to deposit ReS2 thin films on large-area (5 cm × 5 cm) substrates.
- Deposition was conducted at moderate temperatures ranging from 120 to 500 °C.
- Characterization involved field emission scanning electron microscopy/energy-dispersive X-ray spectroscopy, grazing incidence X-ray diffractometry, atomic force microscopy, focused ion beam/transmission electron microscopy, X-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis.
Main Results:
- A precise and controllable ALD process for ReS2 thin film deposition was successfully established.
- High-quality ReS2 films were grown on large-area substrates.
- Comprehensive characterization confirmed the material's properties and structural integrity.
Conclusions:
- The developed ALD process enables the fabrication of ReS2 thin films with potential for applications beyond planar architectures.
- The technique demonstrates scalability towards industrial production.
- This advancement broadens the scope for utilizing ReS2 in next-generation electronic and optoelectronic devices.
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