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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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Atomic-Scale Insights into the Oxidation of Aluminum

Lan Nguyen1, Teruo Hashimoto1, Dmitri N Zakharov2

  • 1School of Materials, University of Manchester , Oxford Road, Manchester M13 9PL, United Kingdom.

ACS Applied Materials & Interfaces
|January 11, 2018
PubMed

Keywords:
aluminumelectron energy loss spectroscopyenvironmental transmission electron microscopyhigh resolution transmission electron microscopynucleationoxidetransmission electron microscopy

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