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Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes.

Sung-Joo Kwon1, Tae-Hee Han, Young-Hoon Kim

  • 1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang, Gyungbuk 790-784, Republic of Korea.

ACS Applied Materials & Interfaces
|January 12, 2018
PubMed
Summary

n-Type doping of graphene using N-DMBI (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine) lowers its work function. This method enhances polymer light-emitting diodes (PLEDs) efficiency and offers air-stability.

Keywords:
CVD grapheneDFT calculationPLEDchemical n-dopingtransparent electrode

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Nanotechnology

Background:

  • Graphene's work function (WF) is crucial for organic optoelectronics.
  • Achieving stable n-type doping in graphene is challenging.
  • Low work function cathodes are essential for efficient device performance.

Purpose of the Study:

  • To investigate n-type doping of graphene using N-DMBI.
  • To evaluate the impact of N-DMBI doping on graphene's work function and optical properties.
  • To assess the performance of N-DMBI-doped graphene as a cathode in inverted polymer light-emitting diodes (PLEDs).

Main Methods:

  • Solution processing of N-DMBI on graphene.
  • Density Functional Theory (DFT) calculations to understand doping mechanisms.
  • Fabrication and characterization of inverted PLEDs with pristine and N-DMBI-doped graphene cathodes.
  • Device performance analysis using current-voltage and luminance-current measurements.

Main Results:

  • N-DMBI doping reduced graphene's work function by ~0.45 eV with minimal impact on optical transmittance.
  • Solution-processed N-DMBI provided both effective n-type doping and air-stability.
  • DFT confirmed radical N-DMBI acts as an electron donor, enabling n-type doping.
  • Inverted PLEDs with N-DMBI-doped graphene cathodes showed significantly improved efficiency (~13.8 cd/A) compared to pristine graphene (~2.74 cd/A).

Conclusions:

  • N-DMBI is a viable agent for achieving low work function, n-type doped graphene.
  • Solution-processed N-DMBI-doped graphene offers a practical approach for air-stable cathodes in organic optoelectronics.
  • This doping strategy enhances the performance of inverted PLEDs, paving the way for improved organic electronic devices.