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Updated: Feb 15, 2026

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Shear-driven phase transformation in silicon nanowires.

L Vincent1, D Djomani1, M Fakfakh1

  • 1Centre de Nanosciences et Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405 Orsay cedex, France.

Nanotechnology
|January 13, 2018
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Silicon nanowires transform into a hexagonal 2H-allotrope via plastic deformation and shear stress relief. This unprecedented allotrope heterostructure formation offers new insights into nanoscale phase transformations in silicon.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Silicon nanowires (Si NWs) are crucial in nanoelectronics.
  • Understanding their phase transformation under stress is vital for device stability and novel applications.
  • Existing knowledge primarily focuses on bulk silicon behavior.

Purpose of the Study:

  • To investigate the formation of allotrope heterostructured Si NWs.
  • To elucidate the mechanism of deformation-induced phase transformation in Si NWs.
  • To explore the influence of temperature and axial orientation on this transformation.

Main Methods:

  • Applying radial compressive stresses to Si NWs embedded in a matrix.
  • Inducing plastic deformation and subsequent phase transformation.
  • Analyzing the transformation using microscopy and stress-strain analysis.
  • Studying the effects of varying temperature (above 500 °C) and nanowire axial orientation.

Main Results:

  • Achieved unprecedented formation of allotrope heterostructured Si NWs.
  • Observed a phase transformation from diamond cubic (3C) to hexagonal (2H) allotrope.
  • Identified shear-stress relief in parallel shear bands on {115} planes as the driving force.
  • Demonstrated a thermally activated process above 500 °C.

Conclusions:

  • The study reveals a novel, shear-driven, deformation-induced phase transformation mechanism in Si NWs.
  • This mechanism differs from that observed in bulk silicon.
  • The findings provide a new route for studying nanoscale phase transformations in silicon.