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Updated: Feb 15, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
Resonant X-ray Emission of Hexagonal Boron Nitride
John Vinson1, Terrence Jach1, Matthias Müller2
1Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899.
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The electronic structure of hexagonal boron nitride (h-BN) is explored using measurements of x-ray absorption and resonant inelastic x-ray scattering (RIXS) at the nitrogen K edge (1s) in tandem with calculations using many-body perturbation theory within the GW and Bethe-Salpeter equation (BSE) approximations. Our calculations include the effects of lattice disorder from phonons activated thermally and from zero point energy. They highlight the influence of disorder on near-edge x-ray spectra.
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