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Updated: Feb 15, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Ballistic Majorana nanowire devices
Önder Gül1,2, Hao Zhang3, Jouri D S Bommer4
1QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands. onder_gul@g.harvard.edu.
Abstract:
Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics1-3. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor4,5, several tunnelling experiments reported characteristic Majorana signatures6-11. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas12-16, and renders the topological properties inaccessible17-20. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system 21 , and exclude the known alternative explanations that invoke disorder12-16 or a nonuniform chemical potential22,23.
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