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Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
Michihiro Yamada1, Yuichi Fujita2, Shinya Yamada3,4
1Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan. michihiro@ee.es.osaka-u.ac.jp.
Materials (Basel, Switzerland)
|January 18, 2018
Summary
Junction size in ferromagnet/semiconductor contacts impacts spin signals in lateral spin-valve devices. Spin absorption at the injector contact influences nonlocal spin signals and temperature dependence, crucial for spintronic applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Lateral spin-valve (LSV) structures are key for spintronic applications.
- Understanding ferromagnet (FM)/semiconductor (SC) interfaces is crucial for efficient spin injection and detection.
Purpose of the Study:
- To investigate the influence of junction size in FM/SC contacts on nonlocal spin signals in SC-based LSV devices.
- To analyze the role of spin absorption at the spin-injector contact.
Main Methods:
- Fabrication of FM/Ge Schottky-tunnel junctions with varying sizes.
- Measurement of four-terminal nonlocal spin signals.
- Temperature-dependent measurements of spin signals.
Main Results:
- Nonlocal spin signal magnitude directly correlates with junction size for low resistance-area product FM/Ge junctions.
- Spin absorption effect at the spin-injector contact significantly influences the observed spin signals.
- Temperature dependence of spin signals is also modulated by spin absorption.
Conclusions:
- Junction size is a critical parameter affecting spin transport in SC-based LSV devices.
- Spin absorption must be considered for optimizing spin-transport signals in SC spintronics.
- Careful design of FM/SC interfaces is necessary for low parasitic resistance spintronic applications.
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