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Updated: Feb 15, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors
Cheng Wei Shih1, Albert Chin2, Chun Fu Lu3
1Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan.
Abstract:
High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ FE ) of 7.6 cm2/Vs, 140 mV/dec subthreshold slope, and 3 × 104 on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded μ FE , because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole μ FE of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits.
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