Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion

Dayanand Kumar1, Rakesh Aluguri1, Umesh Chand1

  • 1Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan.

Nanotechnology
|January 20, 2018
PubMed
Abstract

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