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Piezotronic Effect on Rashba Spin-Orbit Coupling in a ZnO/P3HT Nanowire Array Structure
Laipan Zhu1,2, Yan Zhang1,2,3, Pei Lin1,2
1CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
ACS Nano
|January 23, 2018
Summary
This study demonstrates tuning spin-orbit coupling in ZnO/P3HT nanowires using piezo-potential, not external voltage. This offers a stable, energy-efficient method for spintronics applications.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Nanotechnology
Background:
- Voltage-gate control of spin precession relies on Rashba spin-orbit coupling (SOC).
- External gate voltages in nanoscale spintronic devices can cause noise and short circuits.
Purpose of the Study:
- To investigate the circular photogalvanic effect (CPGE) in ZnO/P3HT nanowire arrays.
- To demonstrate an alternative method for tuning Rashba SOC without external power supplies.
Main Methods:
- Fabrication of ZnO/P3HT nanowire array structures.
- Excitation of devices under oblique incidence to observe CPGE.
- Utilizing inner-crystal piezo-potential for tuning Rashba SOC.
Main Results:
- A strong Rashba SOC was induced by the ZnO/P3HT heterointerface's asymmetry.
- Rashba SOC was effectively tuned by the inner-crystal piezo-potential.
- Piezo-potential enabled control of spin photocurrent without external voltage.
Conclusions:
- Piezo-potential offers a stable and energy-efficient method for controlling spin-orbit coupling.
- This approach avoids issues associated with external gate voltages in spintronic devices.
- Demonstrates potential for large-scale, flexible spintronics using piezoelectric nanowires.
Keywords:
Rashba spin−orbit coupling (SOC)ZnO nanowire arraycircular photogalvanic effect (CPGE)piezo-potentialpiezotronic effectMore Related Videos
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