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Updated: Feb 15, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Publisher Correction: Stateful characterization of resistive switching TiO2 with electron beam induced currents
Brian D Hoskins1,2, Gina C Adam3,4, Evgheni Strelcov5,6
1Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA. brian.hoskins@nist.gov.
Abstract:
The original version of this Article contained an error in Eq. 1. The arrows between the symbols "T" and "B", and "B" and "T", were written "↔" but should have been "→", and incorrectly read: IEBIC=IEBAC+ISEE+I(e↔h)+IEBICT↔B+IESEEB↔T The correct from of the Eq. 1 is as follows:IEBIC=IEBAC+ISEE+I(e↔h)+IEBICT→B+IESEEB→T This has now been corrected in both the PDF and HTML versions of the article.
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