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This study introduces a new complementary resistive switch (CRS) device using ferroelectric tunnel junctions for nondestructive readout in memory arrays. The novel design significantly suppresses sneak currents, enhancing memory performance and scalability.

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Schottky barriercomplementary resistive switchescrossbar arrayferroelectric field effectferroelectric tunnel junctionresistive switchingsneak leakage

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electrical Engineering

Background:

  • Crossbar memory arrays suffer from sneak leakage currents, limiting their performance and scalability.
  • Complementary resistive switches (CRSs) offer a solution by effectively suppressing sneak leakage.
  • Ferroelectric tunnel junctions (FTJs) are promising candidates for CRS devices due to their nonvolatile resistance switching properties.

Purpose of the Study:

  • To propose and demonstrate a new CRS device based on back-to-back in-series FTJs for nondestructive readout.
  • To investigate the electrical transport properties and resistance switching behavior of the proposed CRS device.
  • To evaluate the effectiveness of the proposed CRS in suppressing sneak currents and enhancing the scalability of crossbar memory arrays.

Main Methods:

  • Fabrication of Pt/BaTiO3/Nb:SrTiO3 FTJ devices.
  • Electrical characterization including current-voltage (I-V) measurements.
  • Analysis of resistance switching characteristics and diode-like transport in the high-resistance state (HRS).
  • Simulation and experimental evaluation of CRS crossbar array performance, focusing on sneak current suppression and scalability.

Main Results:

  • The FTJ elements exhibited nonvolatile resistance switching and diode-like transport in the HRS due to ferroelectric enhancement of the Schottky barrier.
  • The rectifying characteristic of the FTJ elements enabled nondestructive readout of complementary HRS + LRS and LRS + HRS states using subthreshold voltage.
  • Significant suppression of sneak current was observed in the Pt/BaTiO3/Nb:SrTiO3 CRS crossbar array.
  • The maximum scaling size of the CRS array was increased by approximately 50 times compared to arrays with single-FTJ devices.

Conclusions:

  • The proposed back-to-back in-series FTJ CRS device enables nondestructive readout and effectively suppresses sneak currents in crossbar memory arrays.
  • The ferroelectric enhancement of the Schottky barrier is crucial for achieving diode-like transport and enabling nondestructive readout.
  • This work facilitates the design of high-performance resistive memories with improved scalability and reduced sneak leakage using a crossbar architecture.