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Updated: Feb 15, 2026

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
Published on: May 22, 2015
Improved quantum efficiency models of CZTSe: GE nanolayer solar cells with a linear electric field
Sanghyun Lee1, Kent J Price, Edgardo Saucedo
1Department Electronics and Computer Engineering Technology, Indiana State University, Terre Haute, IN 47809, USA. Sanghyun.lee@indstate.edu.
Abstract:
We fabricated and characterized CZTSe:Ge nanolayer (<10 nm) thin film solar cells to quantitatively demonstrate an exact analytical model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed with the incomplete gamma function of the quantum efficiency as compared to the empirical data at forward bias conditions. This model is characterized with a consistent set of parameters from a series of measurements and the literature. Using the analytical modelling method, the carrier collection profile in the absorber is calculated and closely fitted by the developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement of the device. The analytical calculation is compared with the measured quantum efficiency data at various bias conditions.
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