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Minimum Resistance Anisotropy of Epitaxial Graphene on SiC

D Momeni Pakdehi1, J Aprojanz2, A Sinterhauf3,4

  • 1Physikalisch-Technische Bundesanstalt , Bundesallee 100, 38116 Braunschweig, Germany.

ACS Applied Materials & Interfaces
|January 30, 2018
PubMed

Keywords:
SiC epitaxial grapheneSiC terrace stepsbilayer-free grapheneisotropic conductanceresistance anisotropyscanning tunneling potentiometryuniform growth

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