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Volatilization gravimetry is an analytical technique that measures the mass lost due to the volatilization of the substance. This technique is used to estimate the amount of volatile material in a sample. To perform this method, heat a known amount of the sample to a high temperature in a crucible or other suitable vessel. The volatile substance in the sample evaporates, and the vapor is completely expelled from the crucible either by heating the sample or bubbling a stream of inert gas through...
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Laboratory-determined Phosphorus Flux from Lake Sediments as a Measure of Internal Phosphorus Loading
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Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory.

Pengfei Zhang1, Dong Li, Mingyuan Chen

  • 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China. echowandy@shu.edu.cn.

Nanoscale
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Summary
This summary is machine-generated.

Researchers developed a novel non-volatile memory device using black phosphorus (BP) and graphene. This device architecture enables flexible control over charge carriers, allowing for two distinct operating modes with retained non-volatile behavior.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • The demand for miniaturized electronic circuits drives the exploration of novel materials and device architectures.
  • Two-dimensional (2D) materials offer unique electronic properties suitable for advanced device applications.

Purpose of the Study:

  • To demonstrate a non-volatile memory device utilizing a black phosphorus (BP)/hexagonal boron nitride (h-BN)/graphene heterostructure.
  • To investigate the tunable electronic properties and operating modes of this novel device architecture.

Main Methods:

  • Fabrication of a heterostructure device comprising black phosphorus (BP) as the transport channel, hexagonal boron nitride (h-BN) as the tunnel barrier, and graphene as the charge-trapping layer.
  • Engineering the device architecture to align only the middle portion of BP over the graphene flake for controlled carrier modulation.
  • Utilizing a control-gate to program and switch between different operating modes.

Main Results:

  • Successful demonstration of a non-volatile black phosphorus (BP) PNP junction device.
  • The device exhibits two distinct operating modes: PNP and PP+P, achieved by flexible tuning of charge carriers.
  • Both operating modes demonstrate stable retention and non-volatile characteristics, programmable via the control-gate.

Conclusions:

  • The developed BP/h-BN/graphene heterostructure offers a promising platform for non-volatile memory applications.
  • The device's ability to operate in multiple modes with non-volatile behavior highlights the potential of 2D material-based architectures for future electronics.